|
The SiLM structure supports choices like these:
- Pixel sizes from 1 µm to over 25 µm with
nearly100% fill factor
- Global shuttering
with
shutter extinction ratios in excess of 100,000:1
-
CDS
noise reduction, on-chip pixel arithmetic
-
Multiple frame acquisitions and averaging
- Random scanning, single or multiple regions
of interest, TDI
- A to D conversion – per sensor, per column
or per pixel, up to 20 bits
- Bayer or other filter patterns,
anti-reflectance coatings, fluorescent coatings
- Post processing functions – anything that
can be built in CMOS
- Analog or digital readout, single or
multiple outputs
- Stitching for devices up to wafer scale or
up to 3-side buttable devices
For a full description of the
SiLM
technology, please download the
pdf
presentation
here.
SiLM Structure
| Lumiense Main Page |
SiLM Demonstation Sensor |
SiLM Quantum Effciency
|
