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SiLM demonstration sensor

Lumiense is currently preparing a sensor optimized for shot-noise-limited imaging that will be made available for purchase in the Fall of 2010.  At that time, performance data and demonstration scheduling will be available.  The sensor will have these characteristics (subject to change):

 

SiLM-16 configuration

 

Parameter Units Normal 2X2 Binned
Active Pixel Array Pixels 4096 x 4096 2048 x 2048
Pixel Pitch

µm

4.8 x 4.8 9.6 x 9.6
Active Area mm 19.66 x 19.66 19.66 x 19.66
Fill Factor % >95 >95
Reflector   Tuned for flat visible
Antiblooming Ratio 1,000,000:1
Pixel ADC Bits 14 14
Shuttering   Global electric

SiLM-16 performance

 

Parameter Units Normal 2X2 Binned
Well capacity

ke-

100 400
Total noise

e-

8 16
Dynamic range

dB

82 88
# of Outputs   10 10
Shutter Attenuation dB 110 110
Pixel Dark Current @ 27C

e-/pixel/s

<<1 <1
pA/cm2 <0.1 <0.1
Global Non-uniformity % (typ) 0.5% 0.5%
% (max) 3.0% 3.0%
Maximum PRNU % 1.0% 1.0%
Max. Gain difference in output

% (typ)

0.7% 0.7%
% (max) 4.0% 4.0%
QE 400-700 nm % >75 >75

SiLM-16 interface

 

Parameter Units Normal 2X2 Binned
ADC Conversion Constant

DN/e-

1.31 0.66
Frame Rate

F/s

30 60
# of Outputs   10 10
Serial data rate

Mb/s

720 720
Pixel Data Rate

Mpix/s

51.4 51.4
Pixel rate

Mpix/s

511.2 255.6
Pixel Rate per Tap

Mpix/s

51.1 25.6
Power dissipation W 1.1 1.1

For a full description of the SiLM-16 sensor, please download the pdf specification here.

 

SiLM Structure | SiLM Sensor Products | Lumiense Main Page | SiLM Quantum Effciency

 

 

 
 

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