New ways to make image sensors
Since 2002, Lumiense Photonics, Inc., in conjunction with HanVision Co.,
Ltd., and a group of highly skilled technical partners, has been
developing a group of new technologies for the manufacture of image
sensors that promises to advance performance on many fronts while
maintaining or improving the cost of sensors and implementation.
Herein, the first results.
SiLM technology - for UV, visible and NIR imagers
Backside imaging (BSI) is a big thing these days because more
photons can be collected when the detection mechanism is
separated from the signal processing circuitry.
Unfortunately, even with microlenses, CMOS BSI devices still
fail to collect much if not most of the arriving light.
CCD BSI devices collect more but suffer from resolution
loss due to charge diffusion.
The Lumiense SiLM (Silicon Film) technology avoids these
problems by completely separating the fabrication of the
photodiode detection array from the control and readout
Read more about the SiLM technology
ACT technology - for uncooled long-wave infrared imagers
Microbolometer technology has ushered in a new era of thermal
by providing high-quality image data from sensors that do not
Lumiense has improved on this idea by designing
elements that remove important limitations on performance:
Lumiense ACT sensor elements do not
require conductive absorbers
Lumiense ACT sensor elements can be
reset to the substrate temperature in 5 microseconds
Lumiense ACT sensors do not require
Lumiense ACT sensors can be readily
scaled to full wafers
Lumiense ACT sensors can have pixel
sizes down to 10 microns
For a full description of the ACT technology, please download the pdf
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